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 NTE3120 Silicon NPN Phototransistor Detector
Features: D High Sensitivity D GaAs LED-Wide Spectral Range, with GaAs LED. D Low Dark Current D Side-View Plastic Package Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Emitter-Collector Voltage, VECO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA Collector Dissipation PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mW Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -25 to +85C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -30 to +100C Electro-Optical Characteristics: (TA = +25C unless otherwise specified)
Parameter Dark Current Photo Current Peak Sensitivity Wavelength Acceptance Half Angle Rise Time Fall Time Collector-Emitter Saturation Voltage Symbol ICEO ICE(L) P q tr tf Test Conditions VCE = 10V VCE = 10V, L = 500 1x, Note 1 VCE = 10V Note 2 VCC = 10V, ICE(L) = 5mA, RL = 100 Min Typ Max Unit - 1 - - - - - 0.01 1.0 3 800 35 4 4 0.2 - - - 10 10 0.5 A mA nm deg s s V
VCE(sat) ICE(L) = 1mA, L = 1000 1x, Note 1
Note 1. Source: Tungsten 2856 K. Note 2. The angle when the light current is halved.
.177 (4.49) Max
.075 (1.9)
.189 (4.8) Max
.090 (2.28)
.189 (4.8)
Note
.138 (3.5)
.095 (2.41) .394 (10.0) Min .097 (2.46) E C
.110 (2.79) .504 (12.8) Min
.100 (2.54) .059 (1.5) R
.047 (1.19)
E
C
Note: Not Soldered


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